SiC Zener Diode for Gate Protection of 4.5 kV SiCGT-Reference-Cited by-同舟云学术

SiC Zener Diode for Gate Protection of 4.5 kV SiCGT

Published:2011-03 Issue: Volume:679-680 Page:559-562
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nakayama Koji¹,Ishii Ryosuke¹,Asano Katsunori¹,Miyazawa Tetsuya²,Tsuchida Hidekazu²

Affiliation:

1. Kansai Electric Power Co., Inc.

2. Central Research Institute of Electric Power Industry (CRIEPI)

Abstract

Zener voltages of the fabricated SiC Zener diodes with various nitrogen concentrations in the range from 7×1017 to 5×1019 cm-3 are 17 to 87 V, and decreased with an increase in the nitrogen concentration. Furthermore, in a chopper circuit using SiC Zener diodes for SiCGT gate protection, the commutated current decreases slowly even though cathode current falls rapidly, and the SiCGT gate is protected from surge voltage by SiC Zener diode. Moreover, the value of Zener voltage after the operation was the same as that before half bridge operation at 47 V.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.679-680.559.pdf

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