Status of Large Diameter SiC Single Crystals at II-VI

Abstract

II-VI is developing large-diameter SiC crystals to be used as lattice-matched, high thermal conductivity substrates for new generation GaN-based and SiC-based semiconductor devices. Large-diameter 6H SiC single crystals are grown at II-VI using our Advanced PVT sublimation growth process. Stable SI properties are achieved by compensation with vanadium, which results in high and spatially uniform resistivity, on the order of 1011 Ohm-cm. The quality of the presently grown 100 mm 6H SI substrates has been dramatically improved [1], and they are free of edge defects. Micropipe density in the 100 mm 6H SI substrates ranges from 2 to 8 cm-2 and dislocation density from 3·104 to 6·104 cm-2. X-ray rocking curves measured on as-sawn 100 mm 6H wafers showed edge-to-edge lattice curvature () between 0.1° and 0.3° and FWHM of the rocking curve between 50 and 100 arc-seconds