Study of the Interface Properties of TiO2/SiO2/SiC by Photocapacitance

Abstract

We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500°C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the high temperature measurements.