Affiliation:
1. Toyota Central Research and Development Laboratories Incorporated
2. Toyota Motor Corporation
3. Denso Corporation
Abstract
A new method for the separation of threading screw dislocations (TSD) and threading edge dislocations (TED) in a 4H-SiC epitaxial layer is proposed by measurement of the etch pit angles. The etch pit angles of the TSDs and TEDs were 28±3 and 18±3°, respectively. In the case of etch pit depths within the epitaxial layer, the values were almost constant. Almost all of the TSDs were converted from basal plane dislocations (BPDs) at the epitaxial layer/substrate interface.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
12 articles.
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