Threading dislocation classification for 4H-SiC substrates using the KOH etching method-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Threading dislocation classification for 4H-SiC substrates using the KOH etching method

Published:2018 Issue:7 Volume:20 Page:978-982
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Cui Yingxin¹²³⁴⁵^ORCID,Hu Xiaobo⁶⁷⁸⁴⁹,Xie Xuejian⁶⁷⁸⁴⁹^ORCID,Xu Xiangang⁶⁷⁸⁴⁹

Affiliation:

1. Microsystem and Terahertz Research Center

2. China Academy of Engineering Physics

3. Chengdu

4. China

5. Institute of Electronic Engineering

6. State Key Lab of Crystal Materials

7. Shandong University

8. Jinan

9. Collaborative Innovation Center for Global Energy Interconnection

Abstract

We have studied the threading dislocations of 4H-SiC substrates with different conductivity types by means of molten KOH defect selective etching.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C7CE01855J

Reference10 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. SiC boule growth by sublimation vapor transport

3. SiC for Microwave Power Transistors

4. Formation of basal plane Frank-type faults in 4H-SiC epitaxial growth

5. Formation of extended defects in 4H-SiC epitaxial growth and development of a fast growth technique

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Discrimination of dislocation in highly doped n-type 4H–SiC by combining electrochemical reaction and molten alkali etching;Materials Science in Semiconductor Processing;2024-12

2. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

3. Comparative Analysis of Defect Characteristics in Silicon Carbide Wafers of Different Grades;Sensors and Materials;2024-05-15

4. Anisotropic etching mechanisms of 4H-SiC: Experimental and first-principles insights;Journal of Semiconductors;2024-01-01

5. Discrimination of Dislocation in Highly Doped N-Type 4h-Sic by Combining Electrochemical Reaction and Molten Alkali Etching;2024

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3