Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design

Abstract

In order to facilitate the circuit design and simulation at extreme temperatures, APEI, Inc. fully characterized a custom-built SiC VJFET transistor at temperatures up to 525 °C and built a Spice model based on the characterization data. The temperature effects were also formulized in this Spice model to ensure its uniform applicability over the entire temperature range. Test circuits of a differential amplifier and a multivibrator were built and tested from room temperature up to 450 °C to validate the proposed SiC JFET model, which could be widely applied in Spice based circuit simulation packages.