An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier-Reference-Cited by-同舟云学术

An All Silicon Carbide High Temperature (450+ °C) High Voltage Gain AC Coupled Differential Amplifier

Published:2011-03 Issue: Volume:679-680 Page:746-749
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Yang Jie¹,Fraley John¹,Western Bryon¹,Schupbach Marcelo¹,Lostetter Alexander B.²

Affiliation:

1. Arkansas Power Electronics International

2. Arkansas Power Electronics International, Inc. (APEI, Inc.)

Abstract

APEI, Inc. designed, fabricated and tested a high gain AC coupled differential amplifier based on a custom-built silicon carbide (SiC) vertical junction field effect transistor (VJFET). This SiC differential amplifier is capable of extreme temperature operation up to 450 °C, at which a high differential voltage gain of more than 47 dB is maintained. This high gain AC coupled differential amplifier can be integrated with high temperature sensors that deliver weak AC output signals to improve signal quality and noise immunity.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.679-680.746.pdf

Reference3 articles.

1. J. Yang, et. al., Material Science Forum, Vol 647 (2010), pp.949-953, (2010).

2. A. S. Sedra and K. C. Smith, Micro-Electronic Circuits, HRW 1982, p.588.

3. X. A. Fu, et. al., Material Science Forum, Vol 648 (2010), pp.1115-1119, (2010).

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