Affiliation:
1. U.S. Naval Research Laboratory
2. American Society for Engineering Education
Abstract
Epitaxial layers were grown on 4° off-axis 4H-SiC substrates by hot-wall chemical vapor deposition. The reduced off-cut angle resulted in lower basal plane dislocation (BPD) densities. The dependence of BPD reduction on growth conditions was investigated using ultraviolet photoluminescence (UVPL) imaging. With this method, it was found that the dislocations were converting to threading edge dislocations throughout the thickness of the film. A high (≥ 97%) conversion efficiency was found for all films grown with this orientation. A conversion of 100% was achieved for several films without pre-growth treatments or growth interrupts.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
57 articles.
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