Affiliation:
1. National Institute of Advanced Industrial Science and Technology (AIST)
2. Nara Institute of Science and Technology
Abstract
This paper describes the influence of the geometric component in the charge-pumping
measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC
MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall
times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in
the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is
expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
3 articles.
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