Development of Lapping and Polishing Technologies of 4H-SiC Wafers for Power Device Applications

Author:

Yashiro Hirokatsu1,Fujimoto Tatsuo1,Ohtani Noboru2,Hoshino Taizo1,Katsuno Masakazu1,Aigo Takashi1,Tsuge Hiroshi1,Nakabayashi Masashi1,Hirano Hosei1,Tatsumi Kohei1

Affiliation:

1. Nippon Steel Corporation

2. Kwansei Gakuin University

Abstract

The development of lapping and polishing technologies for SiC single crystal wafers has realized the fabrication of an extremely flat SiC wafer with excellent surface quality. To improve the SiC wafer flatness, we developed a four-step lapping process consisting of four stages of both-side lapping with different grit-size abrasives. We have applied this process to lapping of 2-inch-diameter SiC wafers and obtained an excellent flatness with TTV (total thickness variation) of less than 3 μm, LTV (local thickness variation) of less than 1 μm, and SORI smaller than 10 μm. We also developed a novel MCP (mechano-chemical polishing) process for SiC wafers to obtain a damage-free smooth surface. During MCP, oxidizing agents added to colloidal silica slurry, such as NaOCl and H2O2, effectively oxidize the SiC wafer surface, and then the resulting oxides are removed by colloidal silica. AFM (atomic force microscope) observation of polished wafer surface revealed that this process allows us to have excellent surface smoothness as low as Ra=0.168 nm and RMS=0.2 nm.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Advanced polishing methods for atomic-scale surfaces: A review;Materials Today Sustainability;2024-09

2. HYPREZ Wafering Solutions: A Novel Approach of SiC Wafering Solution;Materials Science Forum;2024-08-21

3. Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers;Advanced Materials Interfaces;2023-04-04

4. Deformation of 4H-SiC: The role of dopants;Applied Physics Letters;2022-01-31

5. The double-side lapping of SiC wafers with semifixed abrasives and resin–combined plates;The International Journal of Advanced Manufacturing Technology;2019-11-18

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3