PL Properties of SiOx Obtained by HFCVD Technique

Author:

Díaz-Becerril T.1,García-Salgado G.1,Coyopol A.1,Rosendo-Andrés E.1,Juárez H.1

Affiliation:

1. Universidad Autónoma de Puebla

Abstract

In this work, SiOx films were deposited on crystalline silicon substrates and their microstructure and photoluminescent properties are reported. The films were deposited by the Hot Filament Chemical Vapor Deposition (HFCVD) technique using molecular hydrogen (H2) and silica glass (SiO2) as reactants. The H2 becomes atomic hydrogen when is flowed through a tungsten wire heated at 2000 °C. According to the chemical reaction, the atomic hydrogen reacts with the solid source (SiO2) and a SiOx film on a substrate is obtained. From FTIR and room temperature photoluminescence measurements can be concluded that, regions with different average size of silicon nano-clusters in the oxide are formed and they probably are the responsible for the light emission in the visible range.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Photoluminescence tuning in SiOx by HFCVD: a review;Journal of Scientific and Technical Applications;2023-04-30

2. Study of phosphorus-doped Si annealed by a multi-wavelength laser;Results in Physics;2022-07

3. Theoretical Study on Laser Annealing of Non-Stoichiometric SiOX films;Himia, Fizika ta Tehnologia Poverhni;2015-11-30

4. Influence of laser annealing on SiOx films properties;Applied Surface Science;2015-05

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