Photoluminescence tuning in SiOx by HFCVD: a review-Reference-Cited by-同舟云学术

Photoluminescence tuning in SiOx by HFCVD: a review

Published:2023-04-30 Issue: Volume: Page:1-15
ISSN:2444-4928
Container-title:Journal of Scientific and Technical Applications
language:en
Short-container-title:JSTA

Author:

AYALA-SÁNCHEZ Erick¹,HERNÁNDEZ-DE LA LUZ José Álvaro David¹,MONFIL-LEYVA Karim¹,LUNA-LÓPEZ José Alberto¹

Affiliation:

1. Benemérita Universidad Autónoma de Puebla

Abstract

Objectives: The present review work shows a detailed study of the optical and structural characteristics of SiOx films using different deposit techniques, among which employing the technique of Chemical Deposit in Vapor Phase by Hot Filament (HFCVD), it was possible to obtain a thin film without annealing and that presents an intense emission of photoluminescence. Methodology: A review of the optical and structural characteristics of SiOx films obtained using the most popular techniques, such as: PECVD, LPCVD, and magnetron sputtering, against the HFCVD technique and the control of process parameters that improve the thickness and emission of photoluminescence. Contribution: How to obtain, adjust or optimize photoluminescence in the visible electromagnetic spectrum of SiOx without thermal annealing, where a strong emission is obtained in the red of the visible electromagnetic spectrum.

Publisher

ECORFAN

Subject

Community and Home Care

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