Abstract
In this paper, diamond abrasive SG films were prepared by means of sol-gel technology for polishing single-crystal SiC wafers. The effects of machining parameters on processing quality including pressure, rotating speed and polishing time were investigated, respectively. The results indicated that the surface roughness decreased with increasing polishing time. While for pressure and rotating speed, there were inflections existing. Polishing SiC wafer under optimized machining parameters, an ultra smooth surface with the roughness of 3.7 nm could be achieved using 40 μm diamond grits.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference6 articles.
1. C.I. Harris, S. Savage, et al: Applied Surface Science, Vol. 184 (2001), p.393.
2. L. Economikos, F.F. Jamin, et al: Future Fab International, Vol. 12 (6) (2002), p.217.
3. C.C.A. Chen, L.S. Shu, S.R. Lee: Materials Processing Technology, Vol. 140 (2003), p.373.
4. J. Liu, X.P. Xu: Key Engineering Materials, Vol. 359-360 (2008), p.280.
5. G.Q. Hu, J. Lu, X.P. Xu: Key Engineering Materials, Vol. 496 (2012), p.1.
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