Controlled Crystallization Process of Phase Change Memory Device by a Separate Heater Structure

Abstract

A Phase change Memory (PCM) device with a separate heater structure was proposed in order to control the crystallization process of the device. Some experimental works have been done to investigate the possibility. A SET pulse with amplitude ranging from 0 V to 3 V and pulse width of 100 ns was applied to the separate-heater layer, TiSi3 for heating up the memory layer, Ge2Sb2Te5. From the experimental result, the resistance of the memory layer dropped gradually by more than two orders of magnitude. This will allow multilevel storage for the memory device.