Memory Effect in Metal–Chalcogenide–Metal Structures for Ultrahigh-Density Nonvolatile Memories-Reference-Cited by-同舟云学术

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Memory Effect in Metal–Chalcogenide–Metal Structures for Ultrahigh-Density Nonvolatile Memories

Published:2006-06-08 Issue:6A Volume:45 Page:4951-4954
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yin You,Sone Hayato,Hosaka Sumio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical bistability and memory switching phenomenon in Cu2FeSnS4 thin films: role of p-n junction;Journal of Solid State Electrochemistry;2019-03-01

2. Bipolar resistive switching effect in laser-induced crystallization AgInSbTe films;Optik;2019-02

3. Chalcogenides to Nanochalcogenides; Exploring Possibilities for Future R&D;Advances in Nanomaterials;2016

4. Controlled Crystallization Process of Phase Change Memory Device by a Separate Heater Structure;Key Engineering Materials;2013-12

5. A Novel Phase Change Memory with a Separate Heater Characterized by Constant Resistance for Multilevel Storage;Key Engineering Materials;2013-01

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