Performance Optimization of AIN Films Using Self-Prepared AIN Target

Abstract

Aluminum nitride (AlN) films were prepared by radio frequency (RF) sputtering technique with self-prepared AlN ceramic target. The influence of substrate type and working gas of different N2 concentration to performance of AlN films were discussed. Microstructures of the films have been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). And, the optical properties have been revealed by diffuse reflection spectrum (DRS). The optimized process to prepare AlN film of single orientation (100) was as follows: deposited on Si (100) substrate and 25% N2 concentration, 250W-300W sputtering power and 90min sputtering time, respectively.