Affiliation:
1. Peking University
2. Sun Yat-Sen University
Abstract
In this paper, polycrystal Ga2O3 thin films were grown on crystal n+-Si substrates by solution process. The XRD profile revealed that monoclinic β-Ga2O3 and rhombohedral α-Ga2O3 were coexisting in the film. The solution-process Ga2O3 film exhibited an ultrahigh transmittance (>97%) to a wavelength range of 280 nm~800 nm. The optical bandgap of ~5.0 eV and breakdown field of 4.2 MV/cm of the Ga2O3 thin film was obtained. Dielectric parameters such as capacitance, dielectric permittivity and loss tangent were investigated. It was observed that these parameters have a strong dependence on frequency.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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