Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO<sub>2</sub> Stacked Layers for Analog Memory Application-Reference-Cited by-同舟云学术

Threshold Voltage Control for MONOS Nonvolatile Memory with High-k HfN/HfO₂ Stacked Layers for Analog Memory Application

Published:2021-01-05 Issue: Volume:1016 Page:1065-1070
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Ohmi Shun Ichiro,Pyo Jooyoung

Abstract

In this paper, we have investigated the threshold voltage (VTH) control of metal-oxide-nitride-oxide-Si (MONOS) nonvolatile memory (NVM) with high-k HfN/HfO2 stacked layers for analog memory application. The Si surface atomically flattening was found to significantly improve the VTH controllability of the MONOS NVM with high-k HfN/HfO2 stacked layers. The multi-level-cell (MLC) operation by controlling the program voltage at the source and drain was demonstrated utilizing MONOS NVM with high-k HfN/HfO2 stacked layers.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.1016.1065.pdf

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