Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC

Abstract

Ion implantation into 4H-SiC induces a local gradient of strain which increases with the nuclear energy losses. With the increase of temperature the strain tends to become uniform in the whole implanted area requiring the migration of particles. In case of helium implantation, defects are more stabilized and their evolutions observed post thermal annealing are concomitant with the surface swelling. The local modifications imputed to the ion process lead to the formation and the pile-up of stacking faults in the highly damaged region.