Accumulation and recovery of irradiation damage in He+ implanted α-SiC
Author:
Publisher
Elsevier BV
Subject
Nuclear Energy and Engineering,General Materials Science,Nuclear and High Energy Physics
Reference20 articles.
1. Silicon carbide: synthesis and processing
2. Ion implantation effects in silicon carbide
3. Amorphization and defect recombination in ion implanted silicon carbide
4. The irradiation-induced crystalline-to-amorphous phase transition in α-SiC
5. Temperature and dose dependence of ion-beam-induced amorphization in α-SiC
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2. Evolution of defects in silicon carbide implanted with helium ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-05
3. Strain Build-Up, Swelling and Stacking Fault Formation in Implanted 4H-SiC;Materials Science Forum;2012-05
4. Strain-induced drift of interstitial atoms in SiC implanted with helium ions at elevated temperature;Journal of Nuclear Materials;2010-02
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