Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

Abstract

A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.