Characterization of SiC JFET in Novel Packaging for 1 MHz Operation-Reference-Cited by-同舟云学术

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation

Published:2012-05 Issue: Volume:717-720 Page:1029-1032
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Okamura Katsuya¹,Ise Keiichi²,Wake Masayoshi¹,Osawa Yutaka³,Takaki Koichi⁴,Takayama Ken¹

Affiliation:

1. High Energy Accelerator Research Organization (KEK)

2. Tohoku Electric Power Co.,Inc.

3. SUN-A Corporation

4. Iwate University

Abstract

A high power discrete SiC-JFET package for accelerator applications has been developed and tested. Successful operation with a dc voltage of 1 kV, a drain current of 27 A, and a repetition rate of 1 MHz was confirmed. Thermal analysis was carefully attempted. The heat dissipation capacity of 235 W with a water-cooled heat sink and the thermal resistance from its junction to outer-surface of 0.56 K/W were demonstrated. These results exhibit the SiC-JFET is a promising device for a switching power supply in future digital accelerators.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.717-720.1029.pdf

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