Affiliation:
1. High Energy Accelerator Research Organization (KEK)
2. Shindengen Electric Manufacturing Co.,Ltd
3. Iwate University
Abstract
Utilizing a high power discrete SiC-JFET developed by KEK, a switching power supply (SPS) that had a circuit topology of H-bridge was designed and constructed to drive the induction acceleration system for the KEK digital accelerator. Following the hopeful result with a resistive dummy load, the SPS was installed in the actual KEK Digital Accelerator system. Consequently, heavy ion beam acceleration was successfully demonstrated. Moreover, we have started to develop a next generation package for a high voltage SiC-JFET, which has the voltage rating of 2.4 kV. Two in one module construction, bonding wire free connection, and bidirectional thermal flowing are included in the design concept of the new package.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
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2. T. Iwashita, et al., KEK Digital Accelerator, Phys. Rev. ST-AB 14, 071301 (2011).
3. T. Yoshimoto, et al., Heavy Ion Beam Acceleration in the KEK Dogotal Accelerator: Induction Acceleration from 200 keV to a Few Tens of MeV, proceedings of the 19th International Symposium on Heavy Ion Inertial Fusion, Berkley, CA, USA (2012).
4. K. Okamura et al., Characterization of SiC JFET in novel packaging for 1 MHz Operation, Material Science Forum Vols. 717-720 (2012) pp.1029-1032.
5. K. Okamura et al., Novel Package of SiC-JFET for a Switching Pulse Supply Operating at 1 MHz for an Induction Synchrotron, ，IEEE Trans. Plasma Sci. ，vol. 40, no. 9, pp.2205-2210 (2012).
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