Abstract
A reliable method for reducing the stacking faults (SFs) is demonstrated on the 3C-SiC (001) surface. It is a practical method based on Monte Carlo (MC) simulations of SF propagation during 3C-SiC epitaxial growth, which showed that introducing some discontinuity on the (001) surface enhanced SF reduction. The method is implemented by patterning on the 3C-SiC (001) surface and subsequent homo-epitaxial growth, and this sufficiently reduced the SF density to less than 400 cm-1. A yield of 97.4 % was estimated for a device-ready area of 10 mm2 by statistical measurements of SF density on the entire epitaxial layer surface.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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