650V SiC JFET for High Efficiency Applications-Reference-Cited by-同舟云学术

650V SiC JFET for High Efficiency Applications

Published:2014-02 Issue: Volume:778-780 Page:871-874
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Bergner Wolfgang¹,Rupp Roland²,Kirchner Uwe¹,Kueck Daniel¹

Affiliation:

1. Infineon Technologies Austria AG

2. Infineon Technologies AG

Abstract

This paper presents for the first time a 650V SiC JFET switch. Although this application class is highly competitive and occupied by Silicon devices the characterization data show unique features which make the SiC switch an outstanding option for future system integration.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.871.pdf

Reference5 articles.

1. Infineon Press Release, Infineon Releases Revolutionary CoolSiC™ 1200V SiC JFET Family with Direct Drive Technology, 5/8/(2012).

2. J. Hilsenbeck, F. Björk, W. Bergner, A Mature 1200 V SiC JFET Technology Optimized for Efficient and Reliable Switching, Proceedings PCIM 2011 (2011) p.562.

3. R. Rupp, R. Gerlach, U. Kirchner, A. Schlögl, R. Kern, Performance of a 650V SiC diode with reduced chip thickness, Mat. Sci. Forum Vols. 717-720 (2012) pp.921-924.

4. Datasheet of IPP65R110CFD at www. infineon. com.

5. Datasheet of IKP08N65H5 at www. infineon. com.

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