Affiliation:
1. Infineon Technologies AG
2. Infineon Technologies Austria AG
Abstract
A significant performance gain of 650V SiC diodes is possible by reducing the wafer thickness from the standard thickness of 350 µm to < 150 µm. Not only the differential resistance of the diodes but also the Rth benefit from this chip thickness reduction. As consequence a further chip size reduction with accompanying capacitive charge reduction leads to a device with improved efficiency in PFC applications under both high load and low load conditions.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference3 articles.
1. R. Rupp, M. Treu, S. Voss, F. Bjoerk, T. Reimann proceedings from ISPSD 2006 on CD (2006).
2. R. Rupp et al. Material Science Forum Vols. 645-648 (2010) pp.885-888.
3. J. Lutz, T. Poller; Workshop Silicon Carbide Power Electronic Applications (2010) in Stockholm (www. acreo. se/Global/Meet-us-at/2010/100519-JLutz. pdf).
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