Microwave Annealing of Al+ Implanted 4H-SiC: Towards Device Fabrication

Abstract

Carrier transport in Al+ implanted 4H-SiC for Al concentrations in the 5 × 1019 5 × 1020 cm-3 range and after 2000°C/30s microwave annealing are characterized. Each sample resistivity decreases with increasing temperature and attains values of about 102 Ωcm for temperatures > 600 K. At room temperature, resistivity decreases from 4 × 10-1 Ωcm to 3 × 102 Ωcm with the increase of implanted Al concentration. The onset of an impurity band conduction around room temperature takes place for implanted Al concentrations > 3 × 1020 cm-3. Al+ implanted and microwave annealed 4HSiC vertical p+-i-n diodes have shown promising forward characteristics.