Remarks on the room temperature impurity band conduction in heavily Al+implanted 4H-SiC-Reference-Cited by-同舟云学术

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Remarks on the room temperature impurity band conduction in heavily Al+implanted 4H-SiC

Published:2015-07-21 Issue:3 Volume:118 Page:035101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Parisini A.¹^ORCID,Gorni M.¹,Nath A.²,Belsito L.³^ORCID,Rao Mulpuri V.²,Nipoti R.³^ORCID

Affiliation:

1. CNISM-Dipartimento di Fisica e Scienze della Terra, Università di Parma, Viale G.P. Usberti 7/A, I-43124 Parma, Italy

2. Department of Electrical and Computer Engineering, George Mason University, 4400 University Dr., Fairfax, Virginia 22030, USA

3. CNR-IMM of Bologna, via Gobetti 101, I-40129 Bologna, Italy

Funder

Army Research Office (ARO)

Defense Advanced Research Projects Agency (DARPA)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4926751

Reference33 articles.

1. ${\rm Al}^{+}$ Implanted 4H-SiC ${\rm p}^{+}$-i-n Diodes: Forward Current Negative Temperature Coefficient

2. Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication

3. Microwave Annealing of Al⁺ Implanted 4H-SiC: Towards Device Fabrication

4. Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC

5. Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors;Journal of Applied Physics;2024-08-26

2. Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition;Japanese Journal of Applied Physics;2023-10-01

3. Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC;Journal of Applied Physics;2023-09-15

4. Electrical Properties of Heavily Al-Doped 4H-SiC;Materials Science Forum;2023-07-21

5. Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC;Japanese Journal of Applied Physics;2021-03-01

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