Surface Evolution of 4H-SiC(0001) during <i>In Situ </i>Surface Preparation and its Influence on Graphene Properties-Reference-Cited by-同舟云学术

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

Published:2013-01 Issue: Volume:740-742 Page:157-160
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

ul Hassan Jawad¹,Meyer Axel²,Cakmakyapan Semih³,Kazar Ozgur³,Ingo Flege Jan²,Falta Jens¹,Ozbay Ekmel³,Janzén Erik¹

Affiliation:

1. Linköping University

2. University of Bremen

3. Bilkent University

Abstract

The evolution of SiC surface morphology during graphene growth process has been studied through the comparison of substrate surface step structure after in-situ etching and graphene growth in vacuum. Influence of in-situ substrate surface preparation on the properties of graphene was studied through the comparison of graphene layers on etched and un-etched substrates grown under same conditions.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.740-742.157.pdf

Reference2 articles.

1. J.A. Robinson, C.P. Puls, N.E. Staley, J.P. Stitt, M.A. Fanton, K.V. Emtsev, T. Seyller, Y. Liu, Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene, Nano Lett, 9 (2009) 964-968.

2. J. Hassan, J.P. Bergman, A. Henry, E. Janzen, In-situ surface preparation of nominally on-axis 4H-SiC substrates, J Cryst Growth, 310 (2008) 4430-4437.

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