Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene-Reference-Cited by-同舟云学术

Raman Topography and Strain Uniformity of Large-Area Epitaxial Graphene

Published:2009-01-30 Issue:3 Volume:9 Page:964-968
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Robinson Joshua A.¹,Puls Conor P.¹,Staley Neal E.¹,Stitt Joseph P.¹,Fanton Mark A.¹,Emtsev Konstantin V.¹,Seyller Thomas¹,Liu Ying¹

Affiliation:

1. Electro-Optics Center, Materials Research Institute, and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, and Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen, Germany

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802852p

Reference20 articles.

1. The rise of graphene

2. Electric Field Effect in Atomically Thin Carbon Films

3. A core level and valence band photoemission study of 6H-SiC

4. High-temperature graphitization of the 6H-SiC (0001) face

5. Electronic Confinement and Coherence in Patterned Epitaxial Graphene

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