Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode

Abstract

We investigate the influence of SiC surface morphology on increase and variability in reverse leakage current of SiC Schottky barrier diodes using device simulation. It is found that etch pits with only a few tens of nm in depth has a large influence on leakage current and is also shown that leakage current is sensitive to both etch pit shape and density. From these results, we suggest the critical density of nanoscale pit, which is suppressing the variability of leakage current, at various drift layer thickness tdrift and doping concentration Ndrift.