Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal
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Published:2014-02
Issue:
Volume:778-780
Page:989-992
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Yen Cheng Tyng1, Hung Chien Chung1, Mikhaylov Aleksey2, Lee Chwan Ying1, Lee Lurng Shehng1, Wei Jeng Hua1, Chiu Ting Yu1, Huang Chih Fang1, Reshanov Sergey A.2, Schöner Adolf2
Affiliation:
1. Industrial Technology Research Institute 2. Acreo AB
Abstract
Two kinds of gate oxides, direct thermal oxidation in a nitrous oxide ambient at 1250°C(TGO) and a PECVD oxide followed by a post deposition oxidation in nitrous at 1150°C (DGO) were studied. DGO showed a lower interface trap density and was able to provide a higher current as being implemented in MOSFETs through the improved channel mobility. However the 6.45 MV/cm average breakdown field of DGO is lower than the 10.1 MV/cm breakdown field of TGO. The lower breakdown field, more leaky behavior and the existence of multiple breakdown mechanisms suggest that DGO needs further improvements before it can be used in real applications.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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