Affiliation:
1. Industrial Technology Research Institute
2. Acreo AB
Abstract
SiC lateral MOSFETs with multi-layers epi-channels were studied in this work. The epi-channel with a high concentration n-type epilayer sandwiched by two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, improved from 1.53 cm2/V.s of devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science