High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves

Abstract

THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 1018 cm-3, 4.36 × 10-14 s, 218 cm2V-1s-1, and 3.14 × 10-2 Ωcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.