Oxidation Induced ON<sub>1</sub>, ON<sub>2a/b</sub> Defects in 4H-SiC Characterized by DLTS-Reference-Cited by-同舟云学术

Oxidation Induced ON₁, ON_2a/b Defects in 4H-SiC Characterized by DLTS

Published:2014-02 Issue: Volume:778-780 Page:281-284
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Booker Ian D.¹,Abdalla Hassan¹,Lilja Louise¹,ul Hassan Jawad¹,Bergman Peder¹,Sveinbjörnsson Einar Ö.¹,Janzén Erik²

Affiliation:

1. Linköping University

2. University of Iceland

Abstract

The deep levels ON1and ON2a/bintroduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON2a/bdefect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.778-780.281.pdf

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