Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals-Reference-Cited by-同舟云学术

Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

Published:2011-11 Issue: Volume:495 Page:120-123
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Nedev Nicola¹,Manolov Emil²,Nesheva Diana²,Krezhov Kiril²,Nedev Roumen¹,Curiel Mario³,Valdez Benjamin¹,Mladenov Alexander²,Levi Zelma²

Affiliation:

1. Universidad Autónoma de Baja California

2. Bulgarian Academy of Sciences

3. Universidad Nacional Autónoma de México

Abstract

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.495.120.pdf

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