Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC
Author:
Affiliation:
1. Hosei University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.905.pdf
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 5Ion-Implantation in SiC;Silicon Carbide;2003-10-30
2. Electrical properties of the regrown implantation-induced amorphous layer on (100)- and (110)-oriented 6H-SiC;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2003-05
3. Maturing ion-implantation technology and its device applications in SiC;Solid-State Electronics;2003-02
4. High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (11\bar20)-Oriented 6H–SiC;Japanese Journal of Applied Physics;2003-01-15
5. Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001);Materials Science Forum;2002-04
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