Electrical properties of the regrown implantation-induced amorphous layer on (100)- and (110)-oriented 6H-SiC-Reference-Cited by-同舟云学术

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Electrical properties of the regrown implantation-induced amorphous layer on (100)- and (110)-oriented 6H-SiC

Published:2003-05 Issue: Volume:206 Page:956-959
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Nakamura Tomonori,Tanabe Hitoshi,Hitomi Takeshi,Satoh Masataka

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. G.L. Harris, Silicon carbide, in: G.L. Harris (Ed.), EMIS Datareviews Series No. 13, INSPEC, London, 1995 (Chapter 7)

3. Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC

4. Hot-Implantation of Phosphorus Ions into 4H-SiC

5. Solid phase epitaxy of implantation-induced amorphous layer in (11̄00)- and (112̄0)-oriented 6H-SiC

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