Doping of Silicon Carbide by Ion Implantation-Reference-Cited by-同舟云学术

Doping of Silicon Carbide by Ion Implantation

Published:2001-01 Issue: Volume:353-356 Page:549-554
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Svensson Bengt Gunnar¹,Hallén Anders²,Linnarsson Margareta K.²,Kuznetsov Andrej Yu.¹,Janson Martin S.³,Formanek Boleslaw⁴,Österman John³,Persson P.O.Å.⁵,Hultman L.⁵,Storasta L.⁶,Carlsson F.H.C.⁵,Bergman Peder⁵,Jagadish C.⁷,Morvan Erwan⁸

Affiliation:

1. University of Oslo

2. KTH Royal Institute of Technology

3. KTH, Royal Institute of Technology

4. Silesian University of Technology

5. Linköping University

6. Central Research Institute of Electric Power Industry (CRIEPI)

7. Australian National University

8. Domaine de Corbeville

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.353-356.549.pdf

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