ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States-Reference-Cited by-同舟云学术

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ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States

Published:2000-05 Issue: Volume:338-342 Page:791-794
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kalabukhova Ekaterina N.¹,Lukin S.N.²

Affiliation:

1. National Academy of Sciences of Ukraine

2. V. Lashkaryov Institute of Semiconductor

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.791.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance;Journal of Applied Physics;2016-01-28

2. DEEP LEVEL DEFECTS IN SILICON CARBIDE;International Journal of High Speed Electronics and Systems;2006-09

3. Electrical and Multifrequency EPR Study of Nitrogen and Carbon Antisite-Related Native Defect in n-Type As-Grown 4H-SiC;Materials Science Forum;2003-09

4. Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis;Materials Science Forum;2002-04

5. Semiconductor impurity parameter determination from Schottky junction thermal admittance spectroscopy;Journal of Applied Physics;2001-04

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