Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance-Reference-Cited by-同舟云学术

Temperature dependent behavior of localized and delocalized electrons in nitrogen-doped 6H SiC crystals as studied by electron spin resonance

Author:

Savchenko D.¹²^ORCID,Kalabukhova E.³,Shanina B.³^ORCID,Cichoň S.¹,Honolka J.¹,Kiselov V.³,Mokhov E.⁴⁵^ORCID

Affiliation:

1. Institute of Physics AS CR, Prague 182 21, Czech Republic

2. National Technical University of Ukraine “Kyiv Polytechnic Institute”, Kyiv 03056, Ukraine

3. V.E. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv 03028, Ukraine

4. A.F. Ioffe Physical Technical Institute, RAS, St. Petersburg 194021, Russia

5. Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg 19710, Russia

Funder

Grantová Agentura České Republiky (GACR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference36 articles.

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