Annealing of Implanted Layers in (1-100) and (11-20) Oriented SiC
Author:
Affiliation:
1. Hosei University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.389-393.773.pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer;Japanese Journal of Applied Physics;2015-05-27
2. Electrical and structural properties of polycrystalline 3C-SiC layer regrown from amorphized 4H-SiC(0001) by P and Al ion implantations;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
3. Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC;Materials Science Forum;2009-03
4. Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy;Materials Science Forum;2006-10
5. Recrystallization process of phosphorus ion implanted 4H–SiC(112−0);Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-01
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