Zinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion Behaviour-Reference-Cited by-同舟云学术

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Zinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion Behaviour

Published:1991-01 Issue: Volume:38-41 Page:701-706
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Stolwijk Nicolaas¹,Grünebaum D.,Perret M.²,Brohl M.

Affiliation:

1. Westfälische Wilhelms-Universität Münster

2. Westf. Wilhelms-Universität München

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.38-41.701.pdf

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical Properties of Metals in Si and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

2. Diffusion and Point Defects in Silicon Materials;Defects and Impurities in Silicon Materials;2015

3. Deactivation of metastable single-crystal silicon hyperdoped with sulfur;Journal of Applied Physics;2013-12-28

4. Spreading-resistance profiling of silicon and germanium at variable temperature;Journal of Applied Physics;2002-10-15

5. Diffusion of sulfur‐35 into silicon using an elemental vapor source;Applied Physics Letters;1993-07-26

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