Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications-Reference-Cited by-同舟云学术

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Characterization of Polycrystalline SiC Grown on SiO₂ and Si₃N₄ by APCVD for MEMS Applications

Published:2000-05 Issue: Volume:338-342 Page:541-544
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Wu Chien-Hung¹,Zorman Christian A.¹,Mehregany Mehran¹

Affiliation:

1. Case Western Reserve University

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.338-342.541.pdf

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical properties of N doped SiC nanostructures obtained by TVA method;SPIE Proceedings;2015-08-20

2. Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures;Materials;2012-11-09

3. SiC Materials and Processing Technology;Silicon Carbide Microsystems for Harsh Environments;2011

4. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems;Journal of Physics D: Applied Physics;2006-04-20

5. SiCOI Structure Fabricated by Hot-Mesh Chemical Vapor Deposition;Advanced Materials Research;2006-02

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