Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/5/11/2270/pdf
Reference36 articles.
1. Academic and industry research progress in germanium nanodevices
2. Ge/III-V channel engineering for future CMOS;Takagi;ECS Trans.,2009
3. Ge-Photodetectors for Si-Based Optoelectronic Integration
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