Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films
Author:
Affiliation:
1. Carnegie Mellon University
2. North Carolina State University
3. Army Research Laboratory
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.1471.pdf
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method;Materials Science Forum;2005-05
2. Pendeo Epitaxial Growth of 3C-SiC on Si Substrates;Materials Science Forum;2004-06
3. Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates;MRS Proceedings;2004
4. GaN deep-level capture barriers;Photodetectors: Materials and Devices VI;2001-06-12
5. Lateral epitaxy and dislocation density reduction in selectively grown GaN structures;Journal of Crystal Growth;2001-02
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