Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Author:
Affiliation:
1. Linköping University
2. Norstel AB
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.338-342.1171.pdf
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon Carbide;Kirk-Othmer Encyclopedia of Chemical Technology;2006-09-15
2. Silicon carbide and diamond for high temperature device applications;Journal of Materials Science: Materials in Electronics;2006-01
3. High-Temperature Electronic Materials: Silicon Carbide and Diamond;Springer Handbook of Electronic and Photonic Materials;2006
4. Current transport properties of Pd/3C–SiC Schottky junctions with planar and vertical structures;Solid State Sciences;2004-04
5. SiC power Schottky and PiN diodes;IEEE Transactions on Electron Devices;2002-04
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