Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs-Reference-Cited by-同舟云学术

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Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs

Published:2002-04 Issue: Volume:389-393 Page:1363-1366
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Sghaier N.¹,Bluet Jean Marie²,Souifi A.²,Guillot Gérard²,Morvan Erwan³,Brylinski Christian⁴

Affiliation:

1. Laboratoire des Physique des Semiconducteurs et des Composants Electrique

2. INSA de Lyon - Domaine Scientifique de la Doua

3. Domaine de Corbeville

4. Université de Lyon

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.389-393.1363.pdf

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices;Japanese Journal of Applied Physics;2006-10-06

2. Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques;Chemical Vapor Deposition;2006-09

3. Silicon carbide metal-semiconductor field-effect transistor with and without a low-doped buffer: Influence of substrate traps;Journal of Applied Physics;2006-07

4. High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics;Materials Science Forum;2005-05

5. Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors;Journal of Electronic Materials;2004-08

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