Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

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Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors

Published:2004-08 Issue:8 Volume:33 Page:908-911
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Cha Ho-Young,Choi Y. C.,Thompson R. M.,Kaper V.,Shealy J. R.,Eastman L. F.,Spencer M. G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-004-0219-2.pdf

Reference11 articles.

1. S.C. Binari, P.B. Klein, and T.E. Kazior, IEEE MTT-S Int. Microwave Symp. Dig. 3, 823 (2002).

2. S.G. Muller et al., Mater. Sci. Forum 389–393, 23 (2002).

3. N. Sghaier, J.M. Bluet, A. Souifi, G. Guillot, E. Morvan, and C. Brylinshki, Mater. Sci. Forum 389–392, 1363 (2002).

4. A.P. Zhang et al., J. Electron. Mater. 32, 437 (2003).

5. K.P. Hilton, M.J. Uren, D.G. Hayes, P. Wilding, and B. Smith, IEEE Int. Symp. on High Performance Electron Devices for Microwave and Optoelectronic Applications (Piscataway, NJ: IEEE, 2000), pp. 67–70.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits;IET Power Electronics;2022-05-28

2. An improved analytical model of 4H-SiC MESFET incorporating bulk and interface trapping effects;Journal of Semiconductors;2015-01

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