Affiliation:
1. University of Electronic Science and Technology of China
Abstract
In this article, based on nucleation and growth mechanism of films, different process conditions of rapid thermal annealing (RTA) had been investigated to attain different orientation and the crystallinity of PZT film. At first, the PZT films had been fabricated by magnetron sputtering on Si/SiO2/Ti/Pt substrates, then crystallized by different stepped rapid thermal annealing process. X-ray diffraction (XRD) was used to analyze the crystal structures of the films and scanning electron microscope (SEM) was used to analyze the surface morphology of the films. As a conclusion about the research is that it is good for controlling the crystallographic orientation and enhancing the crystallinity of PZT film by different stepped rapid thermal annealing process
Publisher
Trans Tech Publications, Ltd.
Reference16 articles.
1. J. P. Han，T. P. Ma: Integrated Ferroelectrics, Vol. 27 (1) (1999), p.9–18.
2. K. H. Kim, J.P. Han, S.W. Jung, et al: IEEE Electron Device Letters, Vol. 23(2) (2002), p.82– 84.
3. J.F. Scott: Integrated Ferroelectrics, Vol. 20 (1-4) (1998), p.15–23.
4. D. S. Yoon, J. S. Roh, S. -M. Lee, et al: Progress in Materials Science, Vol. 48(4) (2003), p.1–97.
5. G. H. Haertling: Journal of the American Ceramic Society, Vol. 82(4) ( 1999), p.797–818.
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